如何快速讀寫MCU內(nèi)部flash？

/*------------ Functions used for all STM32F10x devices -----*/void FLASH_SetLatency(uint32_t FLASH_Latency);void FLASH_HalfCycleAccessCmd(uint32_t FLASH_HalfCycleAccess);void FLASH_PrefetchBufferCmd(uint32_t FLASH_PrefetchBuffer);void FLASH_Unlock(void);void FLASH_Lock(void);FLASH_Status FLASH_ErasePage(uint32_t Page_Address);FLASH_Status FLASH_EraseAllPages(void);FLASH_Status FLASH_EraseOptionBytes(void);FLASH_Status FLASH_ProgramWord(uint32_t Address, uint32_t Data);FLASH_Status FLASH_ProgramHalfWord(uint32_t Address, uint16_t Data);FLASH_Status FLASH_ProgramOptionByteData(uint32_t Address, uint8_t Data);FLASH_Status FLASH_EnableWriteProtection(uint32_t FLASH_Pages);FLASH_Status FLASH_ReadOutProtection(FunctionalState NewState);FLASH_Status FLASH_UserOptionByteConfig(uint16_t OB_IWDG, uint16_t OB_STOP, uint16_t OB_STDBY);uint32_t FLASH_GetUserOptionByte(void);uint32_t FLASH_GetWriteProtectionOptionByte(void);
FlagStatus FLASH_GetReadOutProtectionStatus(void);FlagStatus FLASH_GetPrefetchBufferStatus(void);void FLASH_ITConfig(uint32_t FLASH_IT, FunctionalState NewState);FlagStatus FLASH_GetFlagStatus(uint32_t FLASH_FLAG);void FLASH_ClearFlag(uint32_t FLASH_FLAG);FLASH_Status FLASH_GetStatus(void);FLASH_Status FLASH_WaitForLastOperation(uint32_t Timeout);/*------------ New function used for all STM32F10x devices -----*/void FLASH_UnlockBank1(void);void FLASH_LockBank1(void);FLASH_Status FLASH_EraseAllBank1Pages(void);FLASH_Status FLASH_GetBank1Status(void);FLASH_StatusFLASH_WaitForLastBank1Operation(uint32_tTimeout);

//不檢查的寫入//WriteAddr:起始地址//pBuffer:數(shù)據(jù)指針//NumToWrite:半字(16位)數(shù)   void STMFLASH_Write_NoCheck(u32 WriteAddr,u16 *pBuffer,u16 NumToWrite)   {                                                   u16 i;        for(i=0;i        {                FLASH_ProgramHalfWord(WriteAddr,pBuffer);            WriteAddr+=2;//地址增加2.        }  }

//從指定地址開始寫入指定長(zhǎng)度的數(shù)據(jù)//WriteAddr:起始地址(此地址必須為2的倍數(shù)!!)//pBuffer:數(shù)據(jù)指針//NumToWrite:半字(16位)數(shù)(就是要寫入的16位數(shù)據(jù)的個(gè)數(shù).)u16 STMFLASH_BUF[STM_SECTOR_SIZE/2];//最多是2K字節(jié)void STMFLASH_Write(u32 WriteAddr,u16 *pBuffer,u16 NumToWrite)        {        u32 secpos;           //扇區(qū)地址        u16 secoff;           //扇區(qū)內(nèi)偏移地址(16位字計(jì)算)        u16 secremain; //扇區(qū)內(nèi)剩余地址(16位字計(jì)算)                    u16 i;            u32 offaddr;   //去掉0X08000000后的地址        if(WriteAddr=(STM32_FLASH_BASE+1024*STM32_FLASH_SIZE)))return;//非法地址        FLASH_Unlock();                                                //解鎖        offaddr=WriteAddr-STM32_FLASH_BASE;                //實(shí)際偏移地址.        secpos=offaddr/STM_SECTOR_SIZE;                        //扇區(qū)地址  0~127 for STM32F103RBT6        secoff=(offaddr%STM_SECTOR_SIZE)/2;                //在扇區(qū)內(nèi)的偏移(2個(gè)字節(jié)為基本單位.)        secremain=STM_SECTOR_SIZE/2-secoff;                //扇區(qū)剩余空間大小           if(NumToWrite<=secremain)        {          secremain=NumToWrite;//不大于該扇區(qū)范圍        }        while(1)         {                        STMFLASH_Read(((secpos*STM_SECTOR_SIZE)+STM32_FLASH_BASE),STMFLASH_BUF,STM_SECTOR_SIZE/2);//讀出整個(gè)扇區(qū)的內(nèi)容                for(i=0;i//校驗(yàn)數(shù)據(jù)//                for(i=0;i<(STM_SECTOR_SIZE/2);i++)//校驗(yàn)數(shù)據(jù)                {                        if(STMFLASH_BUF[secoff+i]!=0XFFFF)break;//需要擦除  //        if(STMFLASH_BUF!=0XFFFF)break;//需要擦除                                         }                FLASH_ClearFlag(FLASH_FLAG_EOP | FLASH_FLAG_PGERR | FLASH_FLAG_WRPRTERR);                if(i//需要擦除//                if(i<(STM_SECTOR_SIZE/2))//需要擦除                {                        FLASH_ClearFlag(FLASH_FLAG_EOP | FLASH_FLAG_PGERR | FLASH_FLAG_WRPRTERR);                        FLASH_ErasePage(secpos*STM_SECTOR_SIZE+STM32_FLASH_BASE);//擦除這個(gè)扇區(qū)                        for(i=0;i//復(fù)制                        {                                STMFLASH_BUF[i+secoff]=pBuffer;                                  }                        STMFLASH_Write_NoCheck(secpos*STM_SECTOR_SIZE+STM32_FLASH_BASE,STMFLASH_BUF,STM_SECTOR_SIZE/2);//寫入整個(gè)扇區(qū)                  }else STMFLASH_Write_NoCheck(WriteAddr,pBuffer,secremain);//寫已經(jīng)擦除了的,直接寫入扇區(qū)剩余區(qū)間.                                                    if(NumToWrite==secremain)break;//寫入結(jié)束了                else//寫入未結(jié)束                {                                secpos++;                                //扇區(qū)地址增1                                secoff=0;                                //偏移位置為0                                            pBuffer+=secremain;          //指針偏移                                WriteAddr+=（secremain*2）;        //寫地址偏移                                            NumToWrite-=secremain;        //字節(jié)(16位)數(shù)遞減                                if(NumToWrite>(STM_SECTOR_SIZE/2))                                {                                  secremain=STM_SECTOR_SIZE/2;//下一個(gè)扇區(qū)還是寫不完                                }                                else                                 {                                   secremain=NumToWrite;//下一個(gè)扇區(qū)可以寫完了                                }                }                 }                FLASH_Lock();//上鎖}

/**  * [url=home.php?mod=space&uid=247401]@brief[/url]  Programs a half word at a specified address.  * [url=home.php?mod=space&uid=536309]@NOTE[/url]   This function can be used for all STM32F10x devices.  * @param  Address: specifies the address to be programmed.  * @param  Data: specifies the data to be programmed.  * @retval FLASH Status: The returned value can be: FLASH_ERROR_PG,  *         FLASH_ERROR_WRP, FLASH_COMPLETE or FLASH_TIMEOUT.   */FLASH_Status FLASH_ProgramHalfWord(uint32_t Address, uint16_t Data){        FLASH_ClearFlag(FLASH_FLAG_EOP | FLASH_FLAG_PGERR | FLASH_FLAG_WRPRTERR);  FLASH_Status status = FLASH_COMPLETE;  /* Check the parameters */  assert_param(IS_FLASH_ADDRESS(Address));#ifdef STM32F10X_XL  /* Wait for last operation to be completed */  status = FLASH_WaitForLastOperation(ProgramTimeout);  if(Address < FLASH_BANK1_END_ADDRESS)  {    if(status == FLASH_COMPLETE)    {      /* if the previous operation is completed, proceed to program the new data */      FLASH->CR |= CR_PG_Set;      *(__IO uint16_t*)Address = Data;      /* Wait for last operation to be completed */      status = FLASH_WaitForLastBank1Operation(ProgramTimeout);      /* Disable the PG Bit */      FLASH->CR &= CR_PG_Reset;    }  }  else  {    if(status == FLASH_COMPLETE)    {      /* if the previous operation is completed, proceed to program the new data */      FLASH->CR2 |= CR_PG_Set;      *(__IO uint16_t*)Address = Data;      /* Wait for last operation to be completed */      status = FLASH_WaitForLastBank2Operation(ProgramTimeout);      /* Disable the PG Bit */      FLASH->CR2 &= CR_PG_Reset;    }  }#else  /* Wait for last operation to be completed */  status = FLASH_WaitForLastOperation(ProgramTimeout);  if(status == FLASH_COMPLETE)  {    /* if the previous operation is completed, proceed to program the new data */    FLASH->CR |= CR_PG_Set;    *(__IO uint16_t*)Address = Data;    /* Wait for last operation to be completed */    status = FLASH_WaitForLastOperation(ProgramTimeout);    /* Disable the PG Bit */    FLASH->CR &= CR_PG_Reset;  } #endif  /* STM32F10X_XL */  /* Return the Program Status */  return status;}

//讀取指定地址的半字(16位數(shù)據(jù))//faddr:讀地址(此地址必須為2的倍數(shù)!!)//返回值:對(duì)應(yīng)數(shù)據(jù).u16 STMFLASH_ReadHalfWord(u32 faddr){        return *(vu16*)faddr; }//從指定地址開始讀出指定長(zhǎng)度的數(shù)據(jù)//ReadAddr:起始地址//pBuffer:數(shù)據(jù)指針//NumToWrite:半字(16位)數(shù)void STMFLASH_Read(u32 ReadAddr,u16 *pBuffer,u16 NumToRead)           {        u16 i;        for(i=0;i        {                pBuffer=STMFLASH_ReadHalfWord(ReadAddr);//讀取2個(gè)字節(jié).                ReadAddr+=2;//偏移2個(gè)字節(jié).                }}