--- 產(chǎn)品參數(shù) ---
- 溝道 P溝道
- 封裝 SOP8封裝
--- 數(shù)據(jù)手冊 ---
--- 產(chǎn)品詳情 ---
SI4435DY-T1-E3 (VBA2317)參數(shù)說明:極性:P溝道;額定電壓:-30V;最大電流:-7A;導(dǎo)通電阻:23mΩ @ 10V, 29mΩ @ 4.5V, 66mΩ @ 2.5V;門源電壓范圍:20Vgs (±V)閾值電壓:-1.37V;封裝:SOP8
應(yīng)用簡介:SI4435DY-T1-E3 (VBA2317) 是一款P溝道MOSFET,適用于中功率應(yīng)用的開關(guān)控制。
具有低導(dǎo)通電阻,有助于降低功耗和熱量產(chǎn)生。
常用于電源開關(guān)、電機驅(qū)動、LED驅(qū)動等。
優(yōu)勢:低導(dǎo)通電阻:有助于降低功耗,提高效率。
適用封裝:SOP8封裝適合需要中等功率控制的設(shè)計。
適用模塊:SI4435DY-T1-E3 (VBA2317) 適用于中功率開關(guān)控制模塊,如電源管理模塊、電機驅(qū)動模塊等。
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