ISL73096RH, ISL73127RH, ISL731

The ISL73096RH, ISL73127RH and ISL73128RH are radiation hardened bipolar transistor arrays. The ISL73096RH consists of three NPN transistors and two PNP
transistors on a common substrate. The ISL73127RH
consists of five NPN transistors on a common substrate. The
ISL73128RH consists of five PNP transistors on a common
substrate. One of our bonded wafer, dielectrically isolated
fabrication processes provides an immunity to Single Event
Latch-up and the capability of highly reliable performance in
any radiation environment.
The high gain-bandwidth product and low noise figure of
these transistors make them ideal for use in high frequency
amplifier and mixer applications. Monolithic construction of
the NPN and PNP transistors provides the closest electrical
and thermal matching possible. Access is provided to each
terminal of the transistors for maximum application flexibility.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD 5962-07218. A “hot-link” is provided on our website for downloading.