亞太經(jīng)合組織2013個(gè)新的和值得注意的部分和技術(shù)

　　亞太經(jīng)合組織2013個(gè)新的和值得注意的部分和技術(shù)

　　應(yīng)用電力電子會(huì)議和博覽會(huì)是電力電子學(xué)中最著名的活動(dòng)，于3月17日至21， 2013日在長灘CA會(huì)議中心舉行。亞太經(jīng)合組織2013繼續(xù)其長期的傳統(tǒng)，以解決電力電子工程師的直接和長期利益的問題。這是事件工程師參加升級他們的知識交流和直流和DC /直流電源，電機(jī)驅(qū)動(dòng)器，逆變器，LED驅(qū)動(dòng)器和UPS設(shè)備。以下按字母順序列出的是在展會(huì)上推出新產(chǎn)品的供應(yīng)商的抽樣。

　　AVX介紹幾種薄膜電容，肖特基整流二極管，超多層介電陶瓷帽，和一個(gè)徑向瓶蓋系列。該公司的目標(biāo)是需要更長的壽命帽，在電力應(yīng)用中的低熱損失，二極管目標(biāo)開關(guān)電源，以及多層帽適合高壓系統(tǒng)。他們還推出了開關(guān)電源的電容器軟件工具與鏈接下載。AVX公司TCJ系列電容器（圖1），LED電視的目標(biāo)是超過100 V的里程碑，第一，今天幾乎兩倍額定電壓類似的產(chǎn)品在市場上是。它們的特點(diǎn)是6.8μF / 100 V（V的情況下），如tcjb685m025r0150，和3.3μF / 125 V（D型）tcjc335m063r0200鉭聚合物SMD器件。電容器使設(shè)計(jì)工程師可以用一個(gè)組件取代兩個(gè)鉭聚合物電容器。

　　Cree introduced the C2M0080120D 20 A， second generation， 1，200 V SiC MOSFET （Figure 2）， and CPM2-1200-0025B 50 A models that are said to deliver twice the amps per dollar. They are targeting the devices for applications including solar circuits， motor drives， and UPS systems. The higher frequency of the SiC devices enables smaller components and that improves the cost-performance trade-off. The performance of these SiC MOSFETs enables the reduction of required current rating by 50 to 70 percent in some high-power applications. When these MOSFETs are properly optimized， customers can now get the performance benefits of SiC with the same or lower systems cost as with previous silicon solutions. For solar inverters and UPS systems， the efficiency improvement is accompanied by size and weight reductions. In motor drive applications， the power density can be more than doubled while increasing efficiency and providing up to twice the maximum torque of similarly rated silicon solutions. The product offering range has been extended to include a much larger 25 mΩ die aimed at the higher power module market for power levels above 30 kW. The 80 mΩ device is intended as a lower cost， higher performance upgrade to the first-generation MOSFET. Die are available with ratings of 25 mΩ， intended as a 50 A building block for high-power modules. The 80 mΩ MOSFET in a TO-247 package is intended as a higher-performance， lower-cost replacement for Cree’s first-generation CMF20120D.