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標(biāo)簽 > infineon
英飛凌科技公司于1999年4月1日在德國(guó)慕尼黑正式成立,是全球領(lǐng)先的半導(dǎo)體公司之一。其前身是西門(mén)子集團(tuán)的半導(dǎo)體部門(mén),于1999年獨(dú)立,2000年上市。其中文名稱(chēng)為億恒科技,2002年后更名為英飛凌科技。
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型號(hào) | 描述 | 數(shù)據(jù)手冊(cè) | 參考價(jià)格 |
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SPP11N80C3_08 | SPP11N80C3_08 - Cool MOS Power Transistor - Infineon Technologies AG |
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SPP11N80C3 | SPP11N80C3 - Cool MOS? Power Transistor - Infineon Technologies AG |
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SPP11N65C3_09 | SPP11N65C3_09 - Cool MOS? Power Transistor Feature New revolutionary high voltage technology - Infineon Technologies AG |
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SPP11N65C3_07 | SPP11N65C3_07 - New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated - Infineon Technologies AG |
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SPP11N65C3 | SPP11N65C3 - Cool MOS? Power Transistor Feature New revolutionary high voltage technology - Infineon Technologies AG |
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SPP11N60S5_09 | SPP11N60S5_09 - Cool MOS? Power Transistor Feature New revolutionary high voltage technology - Infineon Technologies AG |
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SPP11N60S5 | SPP11N60S5 - Cool MOS? Power Transistor Feature New revolutionary high voltage technology - Infineon Technologies AG |
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SPP11N60CFD_09 | SPP11N60CFD_09 - Cool MOS Power Transistor - Infineon Technologies AG |
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SPP11N60CFD_07 | SPP11N60CFD_07 - Cool MOS? Power Transistor Feature New revolutionary high voltage technology - Infineon Technologies AG |
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SPP11N60CFD | SPP11N60CFD - Cool MOS? Power Transistor - Infineon Technologies AG |
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SPP11N60C3_09 | SPP11N60C3_09 - Cool MOS? Power Transistor Feature New revolutionary high voltage technology - Infineon Technologies AG |
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SPP11N60C3_05 | SPP11N60C3_05 - Cool MOS? Power Transistor - Infineon Technologies AG |
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SPP11N60C3 | SPP11N60C3 - Cool MOS Power Transistor - Infineon Technologies AG |
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SPP10N10L | SPP10N10L - SIPMOS Power-Transistor - Infineon Technologies AG |
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SPP100N08S2L-07 | SPP100N08S2L-07 - OptiMOS Power-Transistor - Infineon Technologies AG |
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SPP100N08S2-07 | SPP100N08S2-07 - OptiMOS Power-Transistor - Infineon Technologies AG |
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SPP100N06S2-05 | SPP100N06S2-05 - OptiMOS Power-Transistor - Infineon Technologies AG |
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SPP08P06P_09 | SPP08P06P_09 - P-Channel Enhancement mode Avalanche rated dv/dt rated - Infineon Technologies AG |
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SPP08P06P | SPP08P06P - P-Channel Enhancement mode Avalanche rated dv/dt rated - Infineon Technologies AG |
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SPP08N80C3_08 | SPP08N80C3_08 - CoolMOSTM Power Transistor Features New revolutionary high voltage technology - Infineon Technologies AG |
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SPP08N80C3 | SPP08N80C3 - CoolMOSTM Power Transistor Features New revolutionary high voltage technology - Infineon Technologies AG |
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SPP08N50C3_09 | SPP08N50C3_09 - New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated - Infineon Technologies AG |
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SPP08N50C3 | SPP08N50C3 - New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated - Infineon Technologies AG |
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SPP07N65C3_10 | SPP07N65C3_10 - Cool MOS Power Transistor - Infineon Technologies AG |
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SPP07N65C3_09 | SPP07N65C3_09 - New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated - Infineon Technologies AG |
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SPP07N65C3 | SPP07N65C3 - New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated - Infineon Technologies AG |
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SPP07N60S5_09 | SPP07N60S5_09 - Cool MOS? Power Transistor Feature New revolutionary high voltage technology - Infineon Technologies AG |
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SPP07N60S5 | SPP07N60S5 - Cool MOS? Power Transistor - Infineon Technologies AG |
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SPP07N60C3_09 | SPP07N60C3_09 - New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated - Infineon Technologies AG |
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SPP07N60C3_07 | SPP07N60C3_07 - New revolutionary high voltage technology Ultra low gate charge - Infineon Technologies AG |
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