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標(biāo)簽 > infineon
英飛凌科技公司于1999年4月1日在德國(guó)慕尼黑正式成立,是全球領(lǐng)先的半導(dǎo)體公司之一。其前身是西門子集團(tuán)的半導(dǎo)體部門,于1999年獨(dú)立,2000年上市。其中文名稱為億恒科技,2002年后更名為英飛凌科技。
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型號(hào) | 描述 | 數(shù)據(jù)手冊(cè) | 參考價(jià)格 |
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SIGC06T60 | SIGC06T60 - IGBT3 Chip - Infineon Technologies AG |
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SIGC06T120CS | SIGC06T120CS - IGBT Chip in NPT-technology - Infineon Technologies AG |
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SIGC04T60GS | SIGC04T60GS - IGBT3 Chip 600V Trench & Field Stop technology positive temperature coefficient - Infineon Technologies AG |
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SIGC04T60G | SIGC04T60G - IGBT3 Chip - Infineon Technologies AG |
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SIGC03T60SNC | SIGC03T60SNC - IGBT Chip in NPT-technology 600V NPT technology 100μm chip - Infineon Technologies AG |
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SIDC85D170H_04 | SIDC85D170H_04 - Fast switching diode chip in EMCON 3 -Technology - Infineon Technologies AG |
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SIDC85D170H | SIDC85D170H - Fast switching diode chip in EMCON 3 -Technology - Infineon Technologies AG |
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SIDC81D120H6 | SIDC81D120H6 - Fast switching diode chip in EMCON-Technology - Infineon Technologies AG |
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SIDC81D120F6 | SIDC81D120F6 - Fast switching diode chip in EMCON-Technology - Infineon Technologies AG |
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SIDC81D120E6 | SIDC81D120E6 - Fast switching diode chip in EMCON-Technology - Infineon Technologies AG |
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SIDC73D170E6_08 | SIDC73D170E6_08 - Fast switching diode chip in Emitter Controlled -Technology small temperature coefficient - Infineon Technologies AG |
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SIDC73D170E6 | SIDC73D170E6 - Fast switching diode chip in Emitter Controlled -Technology small temperature coefficient - Infineon Technologies AG |
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SIDC59D170H_04 | SIDC59D170H_04 - Fast switching diode chip in EMCON 3 -Technology - Infineon Technologies AG |
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SIDC56D170E6_08 | SIDC56D170E6_08 - Fast switching diode chip in Emitter Controlled -Technology - Infineon Technologies AG |
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SIDC56D170E6 | SIDC56D170E6 - Fast switching diode chip in EMCON-Technology - Infineon Technologies AG |
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SIDC56D120F6 | SIDC56D120F6 - Fast switching diode chip in EMCON-Technology - Infineon Technologies AG |
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SIDC53D120H6 | SIDC53D120H6 - Fast switching diode chip in EMCON-Technology - Infineon Technologies AG |
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SIDC46D170H | SIDC46D170H - Fast switching diode chip in EMCON 3 -Technology - Infineon Technologies AG |
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SIDC42D170E6_08 | SIDC42D170E6_08 - Fast switching diode chip in Emitter Controlled -Technology - Infineon Technologies AG |
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SIDC42D170E6 | SIDC42D170E6 - Fast switching diode chip in EMCON-Technology - Infineon Technologies AG |
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SIDC42D120F6 | SIDC42D120F6 - Fast switching diode chip in EMCON-Technology - Infineon Technologies AG |
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SIDC42D120E6 | SIDC42D120E6 - Fast switching diode chip in EMCON-Technology - Infineon Technologies AG |
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SIDC32D170H | SIDC32D170H - Fast switching diode chip in EMCON 3 -Technology - Infineon Technologies AG |
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SIDC30D60E6 | SIDC30D60E6 - Fast switching diode chip in EMCON-Technology - Infineon Technologies AG |
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SIDC30D120H6 | SIDC30D120H6 - Fast switching diode chip in EMCON-Technology - Infineon Technologies AG |
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SIDC23D60E6 | SIDC23D60E6 - Fast switching diode chip in EMCON-Technology - Infineon Technologies AG |
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SIDC23D120H6 | SIDC23D120H6 - Fast switching diode chip in EMCON-Technology - Infineon Technologies AG |
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SIDC23D120F6 | SIDC23D120F6 - Fast switching diode chip in EMCON-Technology - Infineon Technologies AG |
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SIDC23D120E6 | SIDC23D120E6 - Fast switching diode chip in EMCON-Technology - Infineon Technologies AG |
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SIDC14D60F6_10 | SIDC14D60F6_10 - Fast switching diode 600V Emitter Controlled technology 70 μm chip soft , fast switching - Infineon Technologies AG |
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