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標(biāo)簽 > infineon
英飛凌科技公司于1999年4月1日在德國慕尼黑正式成立,是全球領(lǐng)先的半導(dǎo)體公司之一。其前身是西門子集團(tuán)的半導(dǎo)體部門,于1999年獨(dú)立,2000年上市。其中文名稱為億恒科技,2002年后更名為英飛凌科技。
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型號(hào) | 描述 | 數(shù)據(jù)手冊(cè) | 參考價(jià)格 |
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LS5421-S | LS5421-S - 5 mm (T1 ??) LED, Non Diffused Super-Bright LED - Infineon Technologies AG |
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LS5421-R | LS5421-R - 5 mm (T1 ??) LED, Non Diffused Super-Bright LED - Infineon Technologies AG |
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LS5421-QT | LS5421-QT - 5 mm (T1 ??) LED, Non Diffused Super-Bright LED - Infineon Technologies AG |
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LS5421-Q | LS5421-Q - 5 mm (T1 ??) LED, Non Diffused Super-Bright LED - Infineon Technologies AG |
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LS5421-NR | LS5421-NR - 5 mm (T1 ??) LED, Non Diffused Super-Bright LED - Infineon Technologies AG |
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LS5421 | LS5421 - 5 mm (T1 ??) LED, Non Diffused Super-Bright LED - Infineon Technologies AG |
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SGW50N60HS_09 | SGW50N60HS_09 - High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation - Infineon Technologies AG |
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SGW50N60HS | SGW50N60HS - High Speed IGBT in NPT-technology - Infineon Technologies AG |
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SGW30N60HS | SGW30N60HS - High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation - Infineon Technologies AG |
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SGW30N60 | SGW30N60 - Fast IGBT in NPT-technology - Infineon Technologies AG |
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SGW25N120_09 | SGW25N120_09 - Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation - Infineon Technologies AG |
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SGW25N120 | SGW25N120 - Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation - Infineon Technologies AG |
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SGW20N60HS | SGW20N60HS - High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation - Infineon Technologies AG |
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SGW20N60 | SGW20N60 - Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation - Infineon Technologies AG |
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SGW15N60 | SGW15N60 - Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation - Infineon Technologies AG |
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SGW15N120 | SGW15N120 - Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation - Infineon Technologies AG |
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SGW10N60A | SGW10N60A - Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation - Infineon Technologies AG |
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SGW02N120_06 | SGW02N120_06 - Fast IGBT in NPT-technology - Infineon Technologies AG |
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SGW02N120 | SGW02N120 - Fast IGBT in NPT-technology - Infineon Technologies AG |
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GMRB6 | GMRB6 - Giant Magneto Resistive Position Sensor - Infineon Technologies AG |
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SGP30N60_09 | SGP30N60_09 - Fast IGBT in NPT-technology - Infineon Technologies AG |
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SGP30N60_08 | SGP30N60_08 - Fast IGBT in NPT-technology - Infineon Technologies AG |
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SGP30N60HS_09 | SGP30N60HS_09 - High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation - Infineon Technologies AG |
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SGP30N60HS | SGP30N60HS - High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation - Infineon Technologies AG |
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SGP30N60 | SGP30N60 - Fast IGBT in NPT-technology - Infineon Technologies AG |
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SGP20N60_09 | SGP20N60_09 - Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation - Infineon Technologies AG |
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SGP20N60HS_09 | SGP20N60HS_09 - High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation - Infineon Technologies AG |
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SGP20N60HS | SGP20N60HS - High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation - Infineon Technologies AG |
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SGP20N60 | SGP20N60 - IGBT Chip in NPT-technology - Infineon Technologies AG |
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SGP15N60_08 | SGP15N60_08 - Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation - Infineon Technologies AG |
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